High power THz quantum cascade laser at ∼ 3.1 THz

The development of quantum cascade laser at ~3.1 THz is reported. The material was designed with bound-to-continuum active region and grown by Veeco GEN-II solid source molecular beam epitaxy. Devices were processed using standard photolithography and wet chemical etching. Lasing is observed up to a heat-sink temperature of 110 K in pulsed mode with total light power above 1W at 10 K. A liquid nitrogen package is achieved.