An addressable amorphous diamond field emission array for e-beam lithography

A novel field emission array has been developed for use in a deep sub-micron electron-beam lithography system. The device consists of a two dimensional array of miniature amorphous diamond (a-D) cathodes deposited on aluminum biasing pads controlled by CMOS circuitry. Each cathode is individually addressable, providing a matrix of independent electron beams. Although the prototype devices presented here are controlled by external ASICs, a low-temperature fabrication process is employed so that future arrays may be placed directly on completed CMOS wafers. The CMOS circuitry addresses and controls the cathodes, providing dynamic control of the e-beam matrix.