Behavioral model of gallium nitride normally ON power HEMT dedicated to inverter simulation and test of driving strategies

In this paper, the authors present a behavioral model of a GaN normally ON HEMT. Forward and reverse conductions are modelized. The modelling of both conduction modes is required to provide accurate diode-less synchronous switching-cell simulation. A dedicated transistor capacitance extraction procedure based on an analysis of turn-on and turn-off waveforms is also proposed and experimented.