Introducing the emitter turn-off thyristor (ETO)

The emitter-turn-off thyristor (ETO) is a hybrid MOS-bipolar high power semiconductor device with the advantages of GTO's high current/voltage capability and MOS gate control. Its superior control characteristics combined with its high speed, wider RBSOA, higher controllable maximum current, forward current saturation capability, its on-device current sensing and low cost make the ETO the most promising power device in high power, smart control applications. Numerical analysis and experimental demonstration of the ETO are presented in this paper.