The Mechanism Of An Abnormal Stress Behavior Of HDPCVD Oxides On Metal-Patterned Wafer

High-density plasma (HDP) CVD has been of great interests in past several years since it produces higher density films with good water blocking and gap-filling capability. In HDPCVD, deposition and sputter etching occur simultaneously by applying a substrate bias [1]. In addition, the compressive stress of HDPCVD oxide is expected to compensate the tensile stress of metal film. Our recent work, however, shows that the deposition of HDPCVD oxide on metal-patterned wafer increased the absolute bow value of the wafer. In this paper, an abnormal stress behavior of HDPCVD oxide on metal pattern is presented with the experimental results.