Silver sintered double-sided cooling power package process for controlled Si power semiconductor devices with aluminum top-metallization

An innovative process to realize 3D packages with controlled Si-power semiconductor devices has been developed. We purpose, for the first time and based on a low-cost process, to make compatible the silver sintering process with aluminum top-metallization dice. The use of a silver epoxy resin allows to process the top metallization of silicon dice. Shear tests on diodes have demonstrated the good mechanical attachment of the silver epoxy resin on the aluminum in comparison to the bottom metallization with silver finish. Then, Si-IGBT has been interconnected in a 3D package using the same process. The static electrical characterization illustrates a very good behavior of the silver epoxy resin compared to a Si-IGBT used in a 2D package with wire-bondings.