Simulation of InAlAs/InGaAs/InAs quantum dots — Quantum well near-infrared detector

We systematically have studied the InAlAs/InGaAs/InAs quantum dots - quantum well with InP substrate by simulating and analyzed with Crosslight Apsys package. The S (signal)/D (dark current) has best working points at 3.5V and -1.3V at 300K and photocurrent spectrum based on quantum dot in well can tail up to 1.70μm. Simulation result still included InGaAs EL spectrum, dark current and photo-responsivity.