Enhance infrared light emitting diodes efficiency using surface plasmonic effect and photonic crystals

Infrared light emitting diodes efficiency based on GaAs substrate has been limited due to light trapping and total internal reflection of GaAs materials. In this paper we introduced a new method of combining surface plasmonic effect and photonic crystal structure to enhance not only light extraction efficiency but also internal quantum efficiency. Through Finite Difference Time Domain method we found that under the condition of 400nm Au grating and 400 nm SiO2 photonic crystals, highest efficiency will be obtained.