Monte Carlo simulation of the dynamic charge hopping transport in organic thin film transistors

Technology of thin film transistors based on organic semiconductor (OTFTs) materials had gained great progress in recent years. A technology computer aided design (TCAD) model is needed to further investigate the devices physics and shortcut the fabrication process. In this article, based on hopping transport mechanism, we proposed a physical model for charge transport process in OTFTs. By Monte Carlo simulation we can get a visualized charge transport and carriers' distribution map in OTFTs and finally get its I-V characteristics, indicating that it can serve as the prototype TCAD model for OTFTs, which gives us a way for understanding the physical process in OTFTs and for predicting the performance of OTFTs before device fabrication.