A mechanism for hydrogen-related transient effects in carbon-doped AlGaAs/GaAs heterostructure bipolar transistors

The transient phenomenon in carbon-doped AlGaAs/GaAs HBT's has been found to reoccur after a brief thermal annealing under no bias. The temperature and the current dependencies have been studied with HBT's made with MOCVD grown wafers. The experimental data ran be explained by a model based on thermal decomposition of C-H complexes during annealing and electron captures by hydrogen ions under minority-carrier injection.