Analysis of drain bias dependence of 1/f noise in HV-MOSFETs

The behavior and dependence of 1/f noise versus drain bias in high-voltage (HV-)MOSFETs is examined in this paper. Low frequency noise of 50V N-and P-channel HV-MOSFETs was measured over a large range of gate and drain bias conditions. Drain voltage steps were chosen very small in linear region while enough points were also measured in saturation regime up to 20V. Recent work on characterization and modelling on flicker noise of HV devices proved that while the overall noise is mostly dominated by the noise originating in the channel, the drift-region-generated noise is apparent only in linear operation especially in strong inversion region of long channel devices. In order this to be clear, this work focuses on the behavior of flicker noise vs. drain bias for all inversion regime.