Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process

In this work, we design a 70nm Mg doped GaN stacked on standard GaN HEMTs structure, the concentration is 5×10
¹⁹
cm
³
. The enhancement mode GaN HEMTs was sequential manufactured following by standard semiconductor procedure. The V
_th
, maximum Ids, and gm peak were +0.8V, 242.3 mA/mm, and 45.3 mS/mm, respectively. Low frequency noise, C-V measurement, and pulse measurement were analyzed to comprehend this device.