Strain modulated variations in monolayer phosphorene n-MOSFET

We investigate the effect of tensile and compressive strain in Phosphorene FET. Different percentage of tensile and compressive strain are applied on monolayer Phosphorene along the zigzag edge and the corresponding effects on bandgap, electron effective mass and ON current are analyzed. The optimum strain region is observed at 4% tensile strain for Phosphorene for the application in FET device. About 8.5 times improvement in ON current was observed for this strain percentage.