Modeling, simulation and comparative study of new compound alloy based P-I-N solar cells - An efficient way of energy management

This work is concentrated on developing a model of PIN solar cell with some III-V compound material. Two new compound materials are used in this solar cell. One of them consists of Gallium Indium Phospide (GaInP) and Aluminium (Al), which reached the band-gap energy of 4.30eV with an absorption coefficient of 1.69e-4 cm
^-1
. Another one consists of Gallium Arsenide (GaAs) and Aluminium (Al), reaching a band gap energy (Eg) of 4.6 eV and absorption coefficient of 1.81e-4 cm
^-1
. As the band gap energy of the material is increased, the material can absorb more photon energy from the optical source and can convert the optical energy into electrical energy more efficiently. The new modeled PIN solar cell made of AlGaInP/AlGaAs has been developed in SILVACO TCAD which is a virtual fabrication and simulation lab. The cell has achieved the conversion efficiency of 51.50% with a Fill Factor (FF) of 91% under the AM1.5 illumination (1000 suns).