GaN-Based Dual-Color Light-Emitting Diodes With a Hybrid Tunnel Junction Structure

The authors propose the use of tunnel junction (TJ) structure to cascade a green multiquantum well (MQW) active region and a blue MQW active region, and the fabrication of GaN-based dual-color light-emitting diodes (LEDs). It was found that output power observed from the TJ cascaded LED was only slightly smaller than the summation of those observed from the green LED and the blue LED. This suggests that most of the injected carriers could tunnel through the TJ and could be repeatedly used for photon generation. Furthermore, it was found that the proposed dual-color LEDs was highly reliable.