A 144MHz integrated resonant regulating rectifier with hybrid pulse modulation

This paper presents a CMOS fully-integrated resonant regulating rectifier (IR
³
) for inductive power telemetry in implantable devices. Employing PWM and PFM feedback, the IR
³
achieves 1.87% of ΔV
_DD
/V
_DD
ratio despite a tenfold change in load with a 1nF decoupling capacitor. At 1V regulation of a 100μW load from a 144MHz RF input, the measured voltage conversion efficiency is greater than 92% at under 5.2mV
_pp
ripple and 54% power conversion efficiency. Implemented in 180nm SOI CMOS, the IR
³
circuit occupies 0.078mm
²
active area.