A new MOSFET with large-tilt-angle implanted drain (LATID) structure

The LATID device features the elimination of the sidewall spacer and self-alignment of n/sup -/ large tilt angle (LAT) and n/sup +/ implants to the same gate edge. Even without a spacer and a heavy drive-in, the LATID can achieve both a sufficiently long L/sub n-/ and an n/sup +/ gate overlap. The LATID achieves improved current drive by more than 50% and improved hot-carrier lifetime by more than three orders of magnitude as compared with a conventional lightly doped drain. The LATID technique is most promising for applications to submicrometer ULSI under 5-V operation.<
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