Comparative analysis of Sense Amplifiers for SRAM in 65nm CMOS technology

A comparative analysis of four sense amplifiers for Static Random Access Memories (SRAMs) namely conventional current Sense Amplifier (CSA), Current Latched Sense Amplifier (SA), Clamped Bitline SA and Gated Diode SA is presented in 65 nm CMOS technology. Mismatches are introduced in the form of W/L variations, bitline capacitance variations, temperature variations and Vdd variations and their effect on the sense amplifier's sense offset and delay offset have been analysed and reported. In the end, the four sense amplifiers are compared based on offset, delay, power and their behavior to mismatches.