Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory

The Al-doped zinc tin oxide based RRAM with non-linearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting ~2nm Al
₂
O
₃
tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined.