Reliability analysis of amorphous silicon thin-film transistors during accelerated ESD stress

This work investigates the degradation of electrical characteristics of amorphous silicon thin-film transistors during the accelerated ESD stress with a 40V high voltage and a high/low current of 2 mA/0.1 μA conditions. Both the leakage current and the threshold voltage shift are severe as the accelerated ESD stress applied at the gate region. The 40V accelerated ESD stress with a high current has more severe impact on the electrical performance of device than that with a low current.