Current imaging technique with nanometer resolution for failure analysis of metal layers

Failure analysis of metal layers (open or short) in semiconductor industry is performed primarily by OBIRCH, thermal imaging, and SQUID technology which show resolution of few microns, only. Here, we present a current imaging technique to isolate the fault by biasing part of the metal lines with AFM tips and scanning another conductive AFM tip in the interested area. The collected current image is capable of isolating failure location in the nanometer regime.