Novel selector for high density non-volatile memory with ultra-low holding voltage and 107 on/off ratio

We present a novel selector made of doped-chalcogenide material. This selector not only achieves low holding voltage (0.2 V) and large on/off ratio (>10
⁷
), but also exhibits the high on-current density (>1.6 MA/cm
²
) and large hysteresis window (1.2 V). Besides, excellent selector performances with ultra-low off-state leakage current (10 pA), high switching speed (<10 ns), high endurance (>10
⁹
), good thermal stability (up to 180°C) have been demonstrated. Furthermore, the device exhibits good scalability which is suitable for 3D array integrations.