Rapid Convergence Bipolar-MOS Composite Device Model - Tonadder- And Its Application To Bipolar-Mode MOSFETs(IGBT)

A rapid convergence bipolar-MOS composite device simulator, TONADDEII, has been developed. It was found that a combination of coupled method, complete Newton scheme, 9 point discretization and ILUBCG method enables rapid convergence for both static and transient solutions regardless of bias conditions. TONADDEII was applied to bipolar-mode MOSFETs(IGBT), analyzing N-buffer effects on electrical characteristics and why the bipolar-mode MOSFET safe operating area exceeds the theoretical limit for NPN bipolar transistors.