Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure

In this letter, we propose a gallium oxide/oxygen doped silicon nitride-based resistive switching device for removing sneak-path currents in high-density crossbar array structures. The device exhibited diodelike characteristics owing to a simple Schottky contact and ultralow power operating behavior (~0.5 V, 1 μA) without any forming process. Both ON/OFF and rectification ratios exceeded 10
³
, and the fastest ac-pulse program (erase) time was 50 (80) ns. The ac-pulse program and erase tests showed 10
⁵
cycle endurance without degradation, and dc test showed over 10
²
cycle endurance. Furthermore, data retention time was >10
⁵
s at room temperature.