High power 1550nm InGaAsP/InP lasers with optimized carrier injection efficiency

The dependence of the laser performance on the distance of the P-InP layer to active region in 1.55-μm high power InGaAsP/InP board area lasers is studied. Structures with different distance of P-InP layer to active region is compared in simulation and lasers with active region displaced towards the p-cladding layer is the best performance. A 1.55-μm high power laser with optimized carrier injection efficiency is manufactured and a maximum single-mode power of 175 mW is obtained from a 1mm long uncoated laser.