12 nm-gate-length ultrathin-body InGaAs/InAs MOSFETs with 8.3•105 ION/IOFF

We report III-V MOSFETs with 12 nm physical gate length, ultrathin 1.5/1 nm InGaAs/lnAs composite channels, and recessed doping-graded InP SID vertical spacers. The FETs demonstrate g
_m
-1.8 mS/μm transconductance, SS-107 mV/dec., minimum loJj1.3 nA/μm at V
_DS
=0.5 V, and well-balanced on-off DC performance with maximum I
_on
/l
_off
-8.3x 10
⁵
. Band-to-band tunneling leakage current is well-controlled through the thin composite InGaAs/lnAs channel, and by the recessed InP source/drain spacers. This work demonstrates that 111-V MOSFETs can scale to the sub-10-nm technology nodes.