Improvement in performance of solution processed indium-zinc-tin oxide thin film transistors by using UV Ozone treatment on zirconium oxide gate insulator

We studied solution processed amorphous indium-zinc-tin oxide (a-IZTO) TFTs, with spin coated ZrO
_x
as the gate insulator. The ZrO
_x
gate insulator was used without and with UV ozone treatment. The TFT without UV ozone treated ZrO
_x
showed saturation mobility (μsat) of 0.89 cm
²
/V, turn-on voltage (V
_ON
) of -0.45V, subthreshold swing (S.S) of 234mV/dec., and a current ratio I
_ON
/I
_OFF
of ~10
⁷
. The TFT with UV ozone treated ZrO
_x
gate insulator exhibits μsat of 2.60 cm
²
/V, V
_ON
of -0.6V, S.S. of 133 mV/dec., and an I
_ON
/I
_OFF
of ~10
⁸
. Also, as can be observed, the leakage current decreases, when the TFT was prepared with UV ozone treatment on ZrO
_x
gate insulator.