An MMIC low-noise amplifier design technique

In this paper we propose a parallel two-finger unit transistor MMIC low-noise amplifier design technique which enables the design of wideband and high linearity low-noise amplifiers with very stable, predictable, and repeatable operation. We prove the feasibility of the proposed design technique by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26–33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.