CD metrology for EUV lithography and etch

Measurement and control of lithography and etch process windows requires continuous advancements in process monitoring metrology. High volume, in-line metrology techniques such as CD-SEM and scatterometry need to be accurate, reproducible and sensitive to process variations at (sub) nm level. To ensure adequate metrology capabilities, these high volume metrology techniques can benefit from reference metrology such as STEM and novel approaches such as hybrid metrology to reduce the total measurement uncertainty (TMU).