Through silicon via process characterization by integrated inspection/metrology solutions in visible and infrared domain

In this paper, we present an integrated in-line solution, combining automatic visual inspection/classification with unique 2D/3D measurement technologies, which was used to characterize the defectivity and the morphology of open through silicon via (TSV) structures. The measurements were performed on 300mm Si wafers hosting several populations of via with diameter varied from 5 to 20 micron, and target aspect ratio from 1:8 to 1:20. Interferometry techniques coupled with high resolution cameras working in white light and infrared domains were used to demonstrate TSV process control in R&D and high volume manufacturing environments.