Evaluation of the extraction method of mobility in InGaAs n-MOSFETs

In this paper, we evaluate the extraction method of the inversion layer mobility using a drain current analysis model. The model parameters have been extracted from the measured value of the current characteristics of a high mobility InGaAs n-MOSFET. The analysis model has the gate voltage dependence of the channel length modulation coefficient. It is found that the mobility shows within 10 percent accuracy in the range more than 0.8 V. As a result, it is found that this method has a sufficient accuracy for high mobility InGaAs n-MOSFETs.