Improvement on switching uniformity of HFOx-based RRAM device fabricated by CMP

The hafnium oxide (HfO
x
)-based Resistive Random Access Memory (RRAM) array devices are fabricated by chemical mechanical planarization (CMP) process, which is based on the optimization of slurry and exploration on mechanism of HfO
x
-CMP. The performance of switching properties post-polishing is investigated from device to device (WIW) as well as compared with those without planarization. The results indicate that the switching uniformity and the dispersion of operational voltages were improved after a two-step planarization, and the mechanism has also been explored.