High field effect mobility of 10,000 cm2/V-s and 5,000 cm2/V-s in undoped and doped monolayer graphene-based transistors

Graphene is considered one of the most promising materials for future electronics as it exhibits high charge carrier mobility. The prerequisite for the development of graphene-based electronics is to dope graphene effectively. In general, graphene-based field effect transistors show unwanted and uncontrolled p-type behavior in the ambient. It is required to dope graphene controllably without affecting its spectacular electronic properties. The prospect of chemical doping and its use in electronic and sensing applications has been extensively studied. Here we report an easy way to achieve doping in graphene layers during chemical exfoliation by choosing the solvent for exfoliation of different dielectric values appropriately. Field effect transistors fabricated on exfoliated graphene show carrier mobilities up to 10,000 cm
²
/V-s in undoped and 5,000 cm
²
/V-s in doped monolayers.