Performance enhancement of InGaAs MOSFET using trench technology

A high-performance In
_0.53
Ga
_0.47
As n-channel MOS-FET by incorporating trench into planner technology is presented. The device has 40 nm gate length with 6 nm high-k HfO
₂
gate oxide thickness. The TaN gate electrode is placed in a trench built in epitaxial layer so that two channels are created in p-base. Source and drain contacts are located symmetrically on both sides of gate electrode. Two-dimensional numerical simulations are performed to analyse and compare the performance of the proposed MOSFET with that of the conventional MOSFET. The proposed MOSFET provides 5.3 times improvement in both output current and peak transconductance and 78% higher unity current gain cut-off frequency (f
_T
) when compared with that of the conventional MOSFET.