Transport measurements on AlSb/InAs nanostructures

The fabrication and characterization of AlSb/InAs nanostructures are reported. Both basic split-gate and split-gate-based quantum dot structures were examined. Considerable structure in the cryogenic conductance characteristics, including 2e/sup 2//h staircases and periodic oscillations suggestive of Coulomb blockade, were found. Conductance staircase effects were observed in the basic split-gate structure above 25 K and to about 10 mV of drain bias at 4.2 K. Single-electron tunneling phenomena, probably due to fluctuation potentials, were observed in the dot structure at 4.2 K.