Growth of AlInGaP in multiwafer planetary reactors(R)

Since the invention of the Planetary Reactors(R) a reliable tool for mass production of various III-V compounds is existing. These reactors haven proven to grow extremely uniform films together with a highly efficient utilization of the precursors. Now a new generation of Planetary Reactors(R) is introduced: the so-called G3 systems. Their main features are: an inductive heating system with extremely low thermal mass for precise and fast heating, high flexibility in the reactor size (15/spl times/2", 35/spl times/2" to 9/spl times/4" wafer load so far, further enlargement possible) and the option to use a fully automated cassette-to-cassette wafer loading system. The benefits of this new design are very short cycle times, extreme run-to-run stability and even further reduced cost of ownership. The performance of this reactor will be discussed in conjunction with the well established ATX 2400 reactor with a set up of 15/spl times/2" or 5/spl times/4" wafer. Uniformity of thickness, luminescence intensity and composition of the most important III-V compounds such as GaInP, GaInAsP and AlGaInP were shown.