Oxide-free InP MIS structures having an ultra-narrow silicon surface quantum well

This paper proposes and experimentally evaluates a novel oxide-free InP MIS structure having an ultra-narrow silicon surface quantum well. A theoretical calculation showed that the structure becomes free of gap states for silicon layer thicknesses below 5 /spl Aring/. Experimentally, an ultra-narrow silicon surface quantum well was realized by direct nitridation of MBE Si layer by ECR N/sub 2/ plasma and its detailed XPS analysis. A stable MIS structure with N/sub ssmin/=2/spl times/10/sup 10/ cm/sup -2/ eV/sup -1/ was successfully realized.