Superjunction IGBT vs. FS IGBT for 200°C operation

Adverse effects on the temperature-dependent properties of Insulated Gate Bipolar Transistors (IGBTs) are often observed when the junction temperature exceeds 175°C. It is believed that attempts in enabling the operation of IGBTs at 200°C will inevitably introduce penalties in some electrical properties of the device. Therefore, the trade-off relationship between the key parameters must be carefully considered. In this paper, we present for the first time that the Superjunction (SJ) IGBT can deliver the best performance trade-offs between the conduction and turn-off losses while maintaining low leakage current at 200°C when compared with other IGBTs. Moreover, the output and switching characteristics of SJ IGBTs depend on the SJ pillar geometry and the doping level of the SJ pillars. We discover that the structure with disconnected p-body and p-pillar with moderate pillar doping concentration (D
_pn
) is the key in achieving excellent turn-off behavior without sacrificing the on-state voltage drop (V
_on
) at 200°C.