Multi-dimensional trade-off considerations of the 750V micro pattern trench IGBT for electric drive train applications

The EDT2 750V uses a micro pattern trench cell with a narrow mesa for reducing the on-state losses with a tailored channel width for short circuit robustness. To account for high system stray inductances (L
_stray
) and currents for Full or Hybrid Electric Vehicle inverter applications, it features a 750V voltage rating compared to the predecessor IGBT3 650V by an optimized vertical structure and proper plasma shaping. This plasma distribution not only determines the performance tradeoff between on-state and switching losses, but at the same time defines the surge voltage for a given L
_stray
*I in the application as visualized in a switch-off loss vs. surge voltage trade-off diagram. Shaping of the feedback capacitance Cgc optimizes the tunability of the switching slopes by means of an external gate resistor for an easier adaption to a wider range of system inductances with low losses.