A Novel Approach Using Discrete Grain-Boundary Traps to Study the Variability of 3-D Vertical-Gate NAND Flash Memory Cells

The 3-D NAND flash memory architectures will be a future trend, because they provide high memory capacity without aggressively scaling down. A vertical-gate (VG) structure composed of polysilicon (poly-Si) channels is a promising 3-D structure that could facilitate realizing an extremely tight-pitch NAND flash memory cell with high memory capacity. However, the variability of the VG memory cell induced by grain boundaries in the poly-Si channels is a major concern for aggressively scaled-down memory cells. In this paper, a discrete-trap approach is applied to emulate the real trap effects in a 3-D memory cell, and the 3-D structure geometry effects and the variation in the threshold voltage (V
_T
) induced by the discrete grain-boundary traps are studied. Various ΔV
_T
behaviors related to the structure geometry and trap position are examined. The effect of varying the body thickness on the ΔV
_T
is stronger than that of varying the channel width. This paper presents various cases for using the discrete-trap approach to study the variability of V
_T
in 3-D VG memory cells.