Improvement of Si doping of In0.53Ga0.47As fin by heated implant

III-V materials are candidates for high mobility channel and low contact resistance SD at 5nm technology node and beyond [1]. Traditional Si
⁺
ion implant of In
0.53
Ga
0.47
As at room temperature causes amorphization of fin and formation of stacking fault defects upon activation anneal. We have demonstrated heated implant can eliminate amorphization induced crystalline damages and improve fin conductance.