Back-hopping phenomenon in perpendicular mangetic tunnel junctions

This study shows a clear correlation between back hopping, write error rate, bias-dependent coercivity (Hc) and the switching phase diagram (SPD) of p-MTJs. Data support that the bias-induced fieldlike torque, in addition to the Slonczewski anti-damping torque, at higher bias voltages in dual-MgO p-MTJ, and a thinner MgO capping layer may suppress the occurrence of back hopping.