Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams

Logic upsets in 3x nm DDR3 SDRAM have been observed with both 45 MeV proton and neutron irradiation. The logic upsets caused massive bit flips, which manifested as either column or row clusters. If all the bits flipped by a logic upset are counted as multiple pseudo SBU events, then the cross-section value of the pseudo SBU events was, at least, four orders of magnitude higher than that of the SBU events.