Transistor aging and reliability in 14nm tri-gate technology

This paper details the transistor aging and gate oxide reliability of Intel's 14nm process technology. This technology introduces Intel's 2
^nd
generation tri-gate transistor and the 4
^th
generation of high-κ dielectrics and metal-gate electrodes. The reliability metrics reported here highlight reliability gains attained through transistor optimizations as well as intrinsic challenges from device scaling.