340 GHz On-Chip 3-D Antenna With 10 dBi Gain and 80% Radiation Efficiency

This paper discusses the design methodologies of a 340 GHz on-chip 3-D antenna. Firstly, a high-gain and high-radiation efficiency substrate integrated waveguide (SIW) cavity backed on-chip antenna is designed using a standard 0.13- μm SiGe BiCMOS technology. Then, a low-permittivity supporter and a dielectric resonator (DR) are vertically stacked on the proposed on-chip antenna, forming a 3-D Yagi-like antenna to further enhance the gain and radiation efficiency. The measurements showed that the proposed antenna achieved a peak gain of ~10 dBi and radiation efficiency of ~80% at 340 GHz; the impedance bandwidth is ~12% with the use of dielectric resonator antenna (DRA) and the Yagi-like structure. The antenna size is ~0.7×0.7 mm
²
.