A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

A new fin p-body insulated gate bipolar transistor (Fin-p IGBT) is designed and experimentally demonstrated. The device features wide trenches and spacer gates, which is implemented using a simple and low-cost process. Compared with the conventional floating p-body IGBT, the fabricated Fin-p IGBT is able to achieve remarkable reduction in both Miller capacitance (-60% at V
_CE
of 15 V) and gate charge (-46%).