Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches

This paper proposes two types of dual-ported (1-read/1-write: 1R/1W) spin-Hall magnetic random-access memory (SH-MRAM) suitable for on-chip cache applications. Separate write and read ports allow simultaneous write and read access, which can mitigate the impact of slow write latency on the system performance without any area overhead compared to the single-ported SH-MRAM. The efficient spin-Hall effect based spin-transfer torque (STT) leads to low-power write operation. In addition, separate read and write current paths of the devices can enhance the read operation without much impact on the write operation. The differential sensing scheme in 1R/1W differential SH-MRAM can further improve sensing power and sensing margin. Compared to the 1R/1W STT-MRAM bit cell, the 1R/1W SH-MRAM bit cell can achieve lower power consumption for write operation and higher sensing margin with low read power consumption under an iso-area condition.