A low-power multichannel receiver for D-band sensing applications in a 0.13µm SiGe BiCMOS technology

This paper presents a low-power multichannel receiver front-end for D-band applications implemented in a 0.13µm SiGe BiCMOS technology, featuring HBTs with f
T
/f
max
of 250/360 GHz. The receivers are driven by a V to D-band frequency doubler via an external local oscillator signal. Measurements on a breakout chip of the doubler shows a maximum conversion gain and output power of 5 dB and −1 dBm respectively. The maximum suppression of the V-band signal at the output is better than 25 dBc. A minimum single sideband noise figure of 11.5 dB, conversion gain greater than 18 dB and an input-referred 1-dB compression point of −7 dBm is obtained for the receivers for input signals between 120 and 132 GHz. The channel-channel gain and noise figure variation remain below 1 dB and the IF channel-to-channel isolation is better than 40 dB. The entire circuit consumes 90 mA from a 3.3 V power supply.