A high efficiency GaN HEMT high power amplifier at L-band

A high efficiency and high power amplifier (HPA) using GaN HEMTs at L-band is presented. This HPA is composed of the GaN HEMTs, and input and output matching networks on substrates with high dielectric constants. All parts are assembled in a metal package. With a 2-stage impedance transformation at the output and a second harmonic termination at the input, more than 55 W of output power, 69.5% of power added efficiency (PAE) and 15.4 dB of power gain were maintained over 7% relative bandwidth at L-band.