Enhancement mode GaAs PHEMT LNA Protection Switch Module for TD-LTE and TD-SCDMA infrastructure applications

A new base station low noise amplifier Protection Switch Module using a proprietary 0.25 µm enhancement-mode GaAs pHEMT MMIC and a PIN diode switch has been designed for TD-LTE and TD-SCDMA infrastructure applications, integrated in a miniature 8mm × 8mm × 1.2mm package. In Receive mode, the first stage LNA has a low noise figure of 0.75 dB, while a second stage High Gain Driver provides an OIP3 of 36.5dBm, measured at 1.92GHz. In Transmit Protection mode, a 50W PIN diode switch redirects the Transmit RF power to an external load, effectively protecting the receiver chain from excessive RF input overload or overheating.